M. Y. Seyidov Et Al. , "Identification of intrinsic deep level defects responsible for electret behavior in T1GaSe(2) layered semiconductor," PHYSICA B-CONDENSED MATTER , vol.483, pp.82-89, 2016
Seyidov, M. Y. Et Al. 2016. Identification of intrinsic deep level defects responsible for electret behavior in T1GaSe(2) layered semiconductor. PHYSICA B-CONDENSED MATTER , vol.483 , 82-89.
Seyidov, M. Y., MİKAİLZADE, F., Uzun, T., Odrinsky, A. P., YAKAR, E., Aliyeva, V. B., ... Babayev, S. S.(2016). Identification of intrinsic deep level defects responsible for electret behavior in T1GaSe(2) layered semiconductor. PHYSICA B-CONDENSED MATTER , vol.483, 82-89.
Seyidov, MirHasan Et Al. "Identification of intrinsic deep level defects responsible for electret behavior in T1GaSe(2) layered semiconductor," PHYSICA B-CONDENSED MATTER , vol.483, 82-89, 2016
Seyidov, MirHasan Y. Et Al. "Identification of intrinsic deep level defects responsible for electret behavior in T1GaSe(2) layered semiconductor." PHYSICA B-CONDENSED MATTER , vol.483, pp.82-89, 2016
Seyidov, M. Y. Et Al. (2016) . "Identification of intrinsic deep level defects responsible for electret behavior in T1GaSe(2) layered semiconductor." PHYSICA B-CONDENSED MATTER , vol.483, pp.82-89.
@article{article, author={MirHasan Yu Seyidov Et Al. }, title={Identification of intrinsic deep level defects responsible for electret behavior in T1GaSe(2) layered semiconductor}, journal={PHYSICA B-CONDENSED MATTER}, year=2016, pages={82-89} }