T. Shirasawa Et Al. , "Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy," 7th International Forum on Advanced Material Science and Technology , Dalian, China, pp.15-17, 2011
Shirasawa, T. Et Al. 2011. Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy. 7th International Forum on Advanced Material Science and Technology , (Dalian, China), 15-17.
Shirasawa, T., Tanaka, S., Muro, T., Tamenori, Y., Harada, Y., Tokushima, T., ... Kinoshita, T.(2011). Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy . 7th International Forum on Advanced Material Science and Technology (pp.15-17). Dalian, China
Shirasawa, T. Et Al. "Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy," 7th International Forum on Advanced Material Science and Technology, Dalian, China, 2011
Shirasawa, T. Et Al. "Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy." 7th International Forum on Advanced Material Science and Technology , Dalian, China, pp.15-17, 2011
Shirasawa, T. Et Al. (2011) . "Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy." 7th International Forum on Advanced Material Science and Technology , Dalian, China, pp.15-17.
@conferencepaper{conferencepaper, author={T. Shirasawa Et Al. }, title={Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy}, congress name={7th International Forum on Advanced Material Science and Technology}, city={Dalian}, country={China}, year={2011}, pages={15-17} }