Investigation of the Conductivity Mechanismus of ZnO/C10H10N2 pn Heterojunction Produced by Spin Coating Method

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Demir R.

International Conference on Engineering, Natural Sciences, and Technological Developments (ICENSTED 2024), Balıkesir, Turkey, 19 - 21 July 2024, pp.257

  • Publication Type: Conference Paper / Summary Text
  • City: Balıkesir
  • Country: Turkey
  • Page Numbers: pp.257
  • Çanakkale Onsekiz Mart University Affiliated: Yes

Abstract

In this research, a p-n heterojunction diode was fabricated using a p-type 4-amino-2-methylquinoline (C10H10N2) on an n-type zinc oxide (ZnO) film and its conductivity mechanism was studied. First, a thin ZnO film was deposited on an ITO substrate by spin coating. A (C10H10N2) film was then deposited on the ZnO film using the same technique. To investigate the transport mechanism, the log (I)−log (V) graph was plotted. The current-voltage characteristics were analyzed using the I~Vm relationship, where V represents the voltage and m represents the power index. The m values ​​were calculated for each region. We found m values from the slope of the graph in the first region, within the low voltage range of 0-1.24 volts, was 1.07, while in the second region, voltage 1.24-3.00 volts, it was 9. 69 was. From these slope values ​​we concluded that ohmic conduction predominates in the first area, while conduction limited by the trap charge predominates in the second area.