Growth and Characterization of Zn-Incorporated Copper Oxide Films

Engin M., Atay F., Kose S., BİLGİN V., Akyuz I.

JOURNAL OF ELECTRONIC MATERIALS, vol.38, no.6, pp.787-796, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 38 Issue: 6
  • Publication Date: 2009
  • Doi Number: 10.1007/s11664-009-0728-0
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.787-796
  • Çanakkale Onsekiz Mart University Affiliated: Yes


In this work, undoped and Zn-doped copper oxide films were deposited on glass substrates at a substrate temperature of 250 +/- A 5A degrees C by using an ultrasonic spray pyrolysis technique. Electrical, optical, and structural properties of the films were investigated, and the effect of Zn incorporation on these properties are presented. The variations of electrical conductivities and electrical conduction mechanisms of all films were investigated in the dark and in the light. Optical properties of the produced films were analyzed by transmission, linear absorption coefficient, and reflection spectra. The band gaps of the films were determined by an optical method. The film structures were studied by x-ray diffraction. To obtain information about structural properties in detail, the grain size (D), dislocation density (delta), and lattice parameters for preferential orientations were calculated. The elemental analyses were performed using energy-dispersive x-ray spectroscopy. It was concluded that Zn has a strong effect, especially on the electrical and structural properties, and the undoped and Zn-doped copper oxide (at 3%) films may be used as absorbing layers in solar cells due to their low resistivities and suitable linear absorption coefficient values.