The ZnS is a direct and wide band gap material and it is used in optoelectronics and especially in photovoltaic solar cell applications. We tried to improve some physical characteristics of ZnS films by Cd incorporation. In this work, Zn1-xCdxS semiconductor films were produced by ultrasonic spray pyrolysis (USP) technique. Zn1-xCdxS films were obtained with incorporation of Cd element into ZnS at different concentrations (0 <= x <= 1). The electrical, optical, structural and morphological properties were investigated. The current-voltage characteristics were taken to see the electrical conduction mechanism and to determine the electrical conductivities of the films. Optical band gaps of the films were determined by optical method and structural properties were analyzed using X-ray diffraction (XRD) patterns. Also, scanning electron microscope (SEM) images were taken to see the distribution on the surface and energy dispersive X-ray spectroscopy (EDS) was used for elemental analysis. It was seen that some Cd incorporated films have higher conductivity values and more homogeneous distributions on the surface than ZnS films. Also, crystallinity level of the films increased. Finally, we think that different experimental parameters and Cd incorporation will improve the properties of ZnS films to be used in optoelectronics and photovoltaic solar cells. (C) 2007 Elsevier Ltd. All rights reserved.