Improvement of electrical characteristics of SnSe/Si heterostructure by integration of Si nanowires

Coşkun E., Gullu H. H., Emir C., Parlak M.

PHYSICA B-CONDENSED MATTER, vol.604, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 604
  • Publication Date: 2021
  • Doi Number: 10.1016/j.physb.2020.412669
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Çanakkale Onsekiz Mart University Affiliated: Yes


In this study, the effects of the nanowire geometry on Si wafer substrate were investigated for the SnSe/Si-nanowire heterojunction device and the obtained results were compared with the one fabricated on planar Si surface. Nanowires on Si surface were produced by metal-assisted etching method and the SnSe film layer was deposited by thermal evaporation technique. On both Si and glass surfaces, deposited film shows polycrystalline and single SnSe phase. From optical transmission measurements, optical band gap of this film was determined as 1.36 eV in a good agreement with the literature. All SnSe/Si heterostructures were found in a p-n diode behavior and the ideality factor and series resistance values were calculated as 2.40, 547 Omega, and 3.71, 1.57 x 10(3) Omega, for SnSe/Si-nanowire and SnSe/Si heterojunctions, respectively. As a result, an improvement in device characteristics concerning the planar Si structure was found by utilizing Si nanowire structure.