The effect of In doping on some physical properties of CdS films


Atay F., Bilgin V. , Akyuz I., Kose S.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.6, ss.197-203, 2003 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 6 Konu: 4
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/s1369-8001(03)00085-4
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Sayfa Sayıları: ss.197-203

Özet

CdS and CdS:In films (at the In percentages of 25, 35 and 45) were deposited onto glass substrates at the substrate temperature of 300+/-5degreesC by ultrasonic spray pyrolysis technique and the effect of In concentration on some physical properties of the films were presented. The deposited films were characterized for their electrical, structural, morphological and elemental properties using current-voltage measurements, X-ray diffraction patterns, scanning electron microscopy micrographs and energy dispersive X-ray spectroscopy analyses, respectively. It was determined from the results of these investigations that the electrical, structural, morphological and elemental properties of CdS films considerably changed with In doping and CdS:In films are more desirable than US for window layer applications in photovoltaic solar cells. (C) 2003 Elsevier Ltd. All rights reserved.