Nanowire geometry effects on devices and transport mechanisms: SnS2/SiNW heterojunction

Coşkun E., Emir C., Terlemezoglu M., Parlak M.

JOURNAL OF MATERIALS SCIENCE, vol.58, pp.15132-15143, 2023 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 58
  • Publication Date: 2023
  • Doi Number: 10.1007/s10853-023-08891-9
  • Journal Name: JOURNAL OF MATERIALS SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Public Affairs Index, Civil Engineering Abstracts
  • Page Numbers: pp.15132-15143
  • Çanakkale Onsekiz Mart University Affiliated: Yes

Abstract

The semiconductor nanowire technology has become essential in developing
more complex and efficient devices. In this study, the Si nanowire (SiNW) heterojunction structure with a two-dimensional SnS2 thin film was investigated.
The SiNW array was created by the metal-assisted etching method because of
length control and production over large areas of nanowires. The created SiNW
has more diminishing reflectivity compared with Si planar substrate. The diode
characteristics of SnS2/SiNW and SnS2/Si planar heterojunctions were investigated
by dark current analysis at room temperature, and the improving diode characteristics by the three-dimensional interface between SiNW and SnS2 thin film were
discussed. Transport mechanisms of the SiNW heterojunction were also studied
for various methods. Thermionic emission and thermally assisted tunneling models are the dominant mechanisms for low voltages (0.02–0.20 V), and the space
charge limiting current mechanism dominates the current for comparingly high
voltages (0.20–0.40 V). All the values reveal the significant impact of the SiNW
on heterojunctions for improving efficiency.