Ruthenium(II) Complex Based Photodiode for Organic Electronic Applications


Tataroglu A., Ocaya R., Dere A., Dayan O., Serbetci Z., Al-Sehemi A. G. , ...Daha Fazla

JOURNAL OF ELECTRONIC MATERIALS, cilt.47, ss.828-833, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 47 Konu: 1
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1007/s11664-017-5882-1
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Sayfa Sayıları: ss.828-833

Özet

In this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current-voltage (I-V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (I broken vertical bar(b)), ideality factor (n) and series resistance (R (s)) of the photodiode were determined from the analysis of I-V characteristics. Moreover, the capacitance/conductance-voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications.