2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED), Chiba, Japan, 29 September - 02 October 1998, pp.516-519
ZnSe films were deposited onto pyrex glass (13 x 26 mm(2)) at substrate temperature of 350 degrees C by spray pyrolysis method. The electrical resistivity of the film was determined as 1.7x10(8) Omega cm from I-V characteristics. The conductivity type of ZnSe thin film was determined to be p-type by hot-probe method. The band gap of ZnSe was obtained from the absorbance measurements in the visible range. Two different values for the band gap were found. They are 2.7 and 2.97 eV. The structural properties of the film were analyzed by X-ray diffraction (XRD). X-ray diffraction shows that polycrystalline ZnSe appears to be oriented with (111), (110) and (311) planes. But (111) plane is preferred orientation. Surface morphology was studied by SEM and AFM. In addition to that, elemental characterization was carried out using EDS.