Modeling and analysis of schottky diode bridge and JFET based liénard oscillator circuit

Çakır K., Mutlu R.

Sigma Journal of Engineering and Natural Sciences, vol.42, no.2, pp.503-515, 2024 (ESCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 42 Issue: 2
  • Publication Date: 2024
  • Doi Number: 10.14744/sigma.2022.00082
  • Journal Name: Sigma Journal of Engineering and Natural Sciences
  • Journal Indexes: Emerging Sources Citation Index (ESCI), Scopus, Academic Search Premier, Directory of Open Access Journals
  • Page Numbers: pp.503-515
  • Keywords: Chua Diode, Circuit Dynamics, Limit Cycle, Liénard Oscillator, Schottky Diode Bridge
  • Çanakkale Onsekiz Mart University Affiliated: Yes

Abstract

Liénard Oscillator circuit has numerous variations. Nowadays, due to the developments of semiconductor technology, such an oscillator can be made using various semiconductor circuit elements. In this study, it has been shown that a Liénard Oscillator can also be made using a Schottky diode bridge and a JFET based nonlinear resistor. First, the new Liénard Oscillator topology is given, then, the dynamic model of the circuit is derived, and the simulations of the circuit are made. The currents, voltages and limit cycle of the Liénard Oscillator circuit are obtained with simulations using LTspice circuit analysis program. The simulations have confirmed that the circuit operates as a Liénard Oscillator.