Influence of Different Aluminum Sources on the NH3 Gas-Sensing Properties of ZnO Thin Films


Ozutok F. , Karaduman I., Demiri S., ACAR S.

JOURNAL OF ELECTRONIC MATERIALS, cilt.47, ss.2648-2657, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 47 Konu: 5
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1007/s11664-018-6099-7
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Sayfa Sayıları: ss.2648-2657

Özet

Herein we report Al-doped ZnO films (AZO) deposited on the ZnO seed layer by chemical bath deposition method. Al powder, Al oxide and Al chloride were used as sources for the deposition process and investigated for their different effects on the NH3 gas-sensing performance. The morphological and microstructural properties were investigated by employing x-ray powder diffraction, scanning electron microscopy analysis and energy-dispersive x-ray spectroscopy. The characterization studies showed that the AZO thin films are crystalline and exhibit a hexagonal wurtzite structure. Ammonia (NH3) gas-sensing measurements of AZO films were performed at different concentration levels and different operation temperatures from 50 degrees C to 210 degrees C. The sample based on powder-Al source showed a higher response, selectivity and short response/recovery time than the remaining samples. The powder Al sample exhibited 33% response to 10-ppm ammonia gas at 190 degrees C, confirming a strong dependence on the dopant source type.