Microprocessing by intense pulsed electron beam

Goktas H. , KIRKICI H., OKE G., UDREA A.

IEEE TRANSACTIONS ON PLASMA SCIENCE, vol.30, no.5, pp.1837-1842, 2002 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 30 Issue: 5
  • Publication Date: 2002
  • Doi Number: 10.1109/tps.2002.806620
  • Page Numbers: pp.1837-1842


Generation of intense electron beams by superposing two discharges, namely, a low-pressure dc glow discharge and a high-current pulsed discharge at pressures and voltages very similar to that of the pseudospark gap devices, has been studied. The small beam diameter, high peak current, and short pulse length are the characteristics of the electron beam generated using this technique. This technique does not require high vacuum facilities, and applications such as microprocessing, X-ray generation, and preionization for high-power lasers are feasible. The electron beam current is in the range of 10-30 A. Microprocessing as drilling tenths of microns diameter holes in different materials such as copper, titanium, and, tantalum has been performed. The microstructure of the irradiated materials has been investigated by means of scanning electron microsope (SEM) and atomic force microscope (AFM). Currently, the possibility of processing a matrix of holes is being considered.