Investigation of the Conductivity Mechanisms of CdS/C10H10N2 PN type Heterojunction

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Demir R., Kaya İ.

International Conferences on Science and Technology , Durres, Albania, 4 - 06 September 2024, pp.2, (Summary Text)

  • Publication Type: Conference Paper / Summary Text
  • City: Durres
  • Country: Albania
  • Page Numbers: pp.2
  • Çanakkale Onsekiz Mart University Affiliated: Yes

Abstract

In this research, a PN type heterojunction diode was fabricated using a P-type 4-amino-2-methylquinoline (C10H10N2) on an N-type cadmium sulphide (CdS) film and its conductivity mechanism was studied. First, a thin CdS film was deposited on an ITO substrate by chemical deposition method (CDM). Then, a film C10H10N2 was then deposited on the CdS film using spin coating technique. To investigate the transport mechanism, the ln (I) − ln (V) graph was plotted. The current-voltage characteristics were analyzed using the I~Vm relationship, where V represents the voltage and m represents the power index. The m values were calculated for each region. We found m values from the slope of the graph in the first region, within the low voltage range of 0-0.36 volts, was 1.41, while in the second region, voltage 0.37-3.00 volts, it was 4.79 was. From these slope values we concluded that ohmic conduction predominates in the first area, while conduction limited by the trap charge predominates in the second area.