Akademik Veri Yönetim Sistemi
INTERNATIONAL CONFERENCES ON SCIENCE AND TECHNOLOGY 4-6 September 2024 in Durres, ALBANIA, 4 - 06 Eylül 2024, ss.2
In this research, a PN type heterojunction diode was
fabricated using a P-type 4-amino-2-methylquinoline (C10H10N2) on an N-type cadmium sulphide (CdS) film and its
conductivity mechanism was studied. First, a thin CdS film was deposited on an
ITO substrate by chemical deposition method (CDM). Then, a film C10H10N2
was then deposited on
the CdS film using spin coating technique. To investigate the transport
mechanism, the ln (I) − ln (V) graph was plotted. The current-voltage
characteristics were analyzed using the I~Vm relationship, where V
represents the voltage and m represents the power index. The m values were
calculated for each region. We found m values from the slope of the graph in
the first region, within the low voltage range of 0-0.36 volts, was 1.41, while
in the second region, voltage 0.37-3.00 volts, it was 4.79 was. From these
slope values we concluded that ohmic conduction predominates in the first area,
while conduction limited by the trap charge predominates in the second area.