The effect of thermal annealing on impurity states in ferroelectric-semiconductor TlGaSe2 within the incommensurate phase


Seyidov M., COŞKUN E., Sahin Y., Khamoev R., Suleymanov R.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.21, no.2, pp.171-174, 2006 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 21 Issue: 2
  • Publication Date: 2006
  • Doi Number: 10.1088/0268-1242/21/2/013
  • Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.171-174

Abstract

The effect of thermal annealing on dark conductivity and thermally stimulated conductivity m ferroelectric-semiconductor TlGaSe2 within the incommensurate phase is investigated. It is shown that both types of conductivities are drastically changed after annealing of the crystal for some hours within the incommensurate phase. The results obtained lead to the conclusion that the main effect of annealing is a large decrease of impurity capture cross sections leading to the dramatic increasing of relaxation times.