Tailoring the physical properties of ultrasonically spray pyrolyzed SnS thin films with silver doping

Güneş İ., Sarica E., Bilgin V., Küçükarslan A.

Journal of Sol-Gel Science and Technology, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1007/s10971-025-06739-z
  • Dergi Adı: Journal of Sol-Gel Science and Technology
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Aerospace Database, Applied Science & Technology Source, Biotechnology Research Abstracts, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Absorber layer, SnS:Ag thin films, Thin film solar cells, Ultrasonic spray pyrolysis
  • Çanakkale Onsekiz Mart Üniversitesi Adresli: Evet

Özet

In this study, the effects of silver (Ag) doping on the structural, morphological, optical, and electrical properties of tin monosulfide (SnS) thin films were investigated. The films, undoped and doped with 3%, 6%, and 9% Ag, were deposited using the ultrasonic spray pyrolysis (USP) technique at a substrate temperature of 350 °C. X-ray diffraction (XRD) analysis confirmed a π-SnS (cubic) structure with (400) preferred orientation for undoped and ≤ 6% Ag-doped films, while 9% doping induced amorphization due to severe lattice distortions. Morphological analyses revealed smooth, void-free surfaces, with average roughness increasing from 5.8 nm (undoped) to 19.6 nm (9% doping). Optical measurements showed that the band gap widened from 1.84 eV (undoped) to 2.47 eV (9% Ag-doped), and Urbach energy increased from 190 meV to 600 meV. Hall effect measurements confirmed p-type conductivity for all films. Resistivity ranged from 4.34 × 105 Ωcm to 9.48 × 105 Ωcm, carrier concentration varied between 2.7 × 1012 cm-3 and 5.6 × 1012 cm-3, while mobility decreased from 3.3 × 101 cm2/Vs to 2.0 × 101 cm2/Vs with increasing Ag doping. These findings demonstrate that Ag doping significantly influences the structural and optoelectronic behavior of SnS thin films, making them promising candidates for thin-film solar cells and optoelectronic applications.