Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure


OZDEMIR O. , ATILGAN İ., AKAOGLU B., Sel K. , KATIRCIOGLU B.

THIN SOLID FILMS, vol.497, pp.149-156, 2006 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 497
  • Publication Date: 2006
  • Doi Number: 10.1016/j.tsf.2005.10.065
  • Title of Journal : THIN SOLID FILMS
  • Page Numbers: pp.149-156

Abstract

A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under strong accumulation and inversion on the frequency power-law was interpreted as due to the carrier exchange mechanism by hopping. (c) 2005 Elsevier B.V All rights reserved.