Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy

Shirasawa T., Tanaka S., Muro T., Tamenori Y., Harada Y., Tokushima T., ...Daha Fazla

7th International Forum on Advanced Material Science and Technology, Dalian, Çin, 26 - 28 Haziran 2011, ss.15-17 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Doi Numarası: 10.4028/www.scientific.net
  • Basıldığı Şehir: Dalian
  • Basıldığı Ülke: Çin
  • Sayfa Sayıları: ss.15-17
  • Çanakkale Onsekiz Mart Üniversitesi Adresli: Hayır

Özet

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.