Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy

Shirasawa T., Tanaka S., Muro T., Tamenori Y., Harada Y., Tokushima T., ...More

7th International Forum on Advanced Material Science and Technology, Dalian, China, 26 - 28 June 2011, pp.15-17, (Full Text) identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • Doi Number: 10.4028/www.scientific.net
  • City: Dalian
  • Country: China
  • Page Numbers: pp.15-17
  • Çanakkale Onsekiz Mart University Affiliated: No

Abstract

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.